- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,222
In-stock
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IR / Infineon | MOSFET MOSFT 80V 6.3A 29mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 6.3 A | 29 mOhms | 38 nC | |||||||||
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2,541
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 8.5A 22mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | |||||||||
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29
In-stock
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IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | ||||
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2,325
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | |||||
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3,238
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | |||||
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156
In-stock
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Texas instruments | MOSFET 100V 6.4mOhm Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.7 mOhms | 2.7 V | 38 nC | Enhancement | NexFET | ||||
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451
In-stock
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Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 6.2 mOhms | 2.6 V | 38 nC | NexFET | |||||
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200
In-stock
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Toshiba | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 34 A | 7.9 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||||
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250
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | NexFET | ||||
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2,844
In-stock
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IR / Infineon | MOSFET MOSFT 30V 140A 4.5mOhm 38nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 38 nC | Enhancement | ||||||
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640
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | Enhancement | ||||||
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1
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 1.4 V to 2.3 V | 38 nC | Enhancement |