- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,433
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC | 8 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.5 A | 14 mOhms | 38 nC | |||||||
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3,222
In-stock
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IR / Infineon | MOSFET MOSFT 80V 6.3A 29mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 6.3 A | 29 mOhms | 38 nC | |||||||
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3,059
In-stock
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | ||||
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2,541
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 8.5A 22mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | |||||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 15 A | 0.013 Ohms | - 1 V | 38 nC | Enhancement | |||
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640
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | Enhancement |
