- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | ||||||
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4,624
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | |||||
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6,581
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.5 mOhms | 30 nC | |||||||||
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GET PRICE |
78,180
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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8,972
In-stock
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onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 2.7 mOhms | 1.3 V | 30 nC | Enhancement | |||||
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6,413
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | |||||
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2,625
In-stock
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Fairchild Semiconductor | MOSFET 30V/20A N-Chan PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.8 A | 5 mOhms | 30 nC | PowerTrench SyncFET | ||||||
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4,044
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
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3,830
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
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1,188
In-stock
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onsemi | MOSFET POWER MOSFET 30V 117A 4 M | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19.6 A | 5.5 mOhms | 30 nC | |||||||
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1,485
In-stock
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onsemi | MOSFET NFET SO8FL 30V 46A 6.95M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 3.4 mOhms | 2.2 V | 30 nC | ||||||
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1,300
In-stock
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onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 116 A | 3.4 mOhms | 2.2 V | 30 nC | ||||||
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27,280
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | ||||
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12,620
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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2,875
In-stock
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onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 127 A | 2.3 mOhms | 1.3 V | 30 nC | Enhancement | |||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS |