- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.027 Ohms (1)
- 0.29 Ohms (1)
- 1.7 mOhms (2)
- 1.8 mOhms (1)
- 10.3 mOhms (1)
- 11.1 mOhms (1)
- 13 mOhms (2)
- 13.9 mOhms (2)
- 14.5 mOhms (5)
- 15 mOhms (1)
- 16 mOhms (1)
- 18 mOhms (1)
- 185 mOhms (1)
- 19 mOhms (1)
- 190 mOhms (1)
- 2.1 mOhms (1)
- 2.6 mOhms (1)
- 200 mOhms (1)
- 27 mOhms (4)
- 270 mOhms (4)
- 28 mOhms (2)
- 31 mOhms (1)
- 4.6 mOhms (1)
- 450 mOhms (1)
- 5.2 mOhms (1)
- 5.5 mOhms (2)
- 50 mOhms (2)
- 500 mOhms (2)
- 51 mOhms (3)
- 6.3 mOhms (3)
- 6.7 mOhms (2)
- 65 mOhms (1)
- 8.5 mOhms (4)
- 85 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Applied Filters :
59 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,635
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | ||||
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10,702
In-stock
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onsemi | MOSFET Single N-CH 60V 40A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 13 mOhms | 1 V to 2 V | 29 nC | |||||
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3,181
In-stock
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IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | |||||
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1,797
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Chan DualCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 40 A | 6.3 mOhms | 3.7 V | 29 nC | Depletion | PowerTrench | |||
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3,281
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 50 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,100
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | ||||
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6,134
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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2,023
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,258
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | ||||
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,780
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 55 V | 5.1 A | 65 mOhms | 29 nC | Enhancement | ||||||
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3,963
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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4,286
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | ||||||||
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20,000
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | ||||
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3,000
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | ||||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 11.1 mOhms | 4 V | 29 nC | |||||
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1,750
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 40 V | 19 A | 4.6 mOhms | 29 nC | Directfet | |||||||
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1,385
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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977
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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983
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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GET PRICE |
8,240
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | 600 V | 18 A | 200 mOhms | 4 V | 29 nC | |||||||
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567
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2 | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 18 A | 190 mOhms | 4 V | 29 nC | ||||||
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
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411
In-stock
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STMicroelectronics | MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 4 V | 29 nC | |||||
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2,170
In-stock
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STMicroelectronics | MOSFET | +/- 18 V | SMD/SMT | TO-252-3 | - | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.027 Ohms | - 1 V | 29 nC | Enhancement | ||||
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770
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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980
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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624
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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697
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16 A | 185 mOhms | 2 V | 29 nC | Enhancement | ||||
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3,399
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement |
