- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
5,060
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
734
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
477
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
5,610
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 23 nC | CoolMOS | |||||
|
|
1,400
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
446
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
490
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
79
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
739
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 23 nC | CoolMOS | |||||
|
|
21,400
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.1 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
240
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
195
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
1,400
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
2,805
In-stock
|
Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 594 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
8,600
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 3 V | 23 nC | CoolMOS | ||||
|
|
VIEW | Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 594 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
2,714
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS |
