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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,481
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 35 A | 19 mOhms | 3 V | 23 nC | Enhancement | ||||
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390
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 60 A | 10.4 mOhms | 23 nC |
