- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
10,792
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | |||||
|
7,337
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | ||||||
|
629
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | ||||||
|
316
In-stock
|
Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement |