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- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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917
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 3 V to 5 V | 23 nC | UniFET | |||||
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GET PRICE |
11,700
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 5 V | 23 nC | UniFET | ||||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement |