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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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1,380
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | ||||||
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1,728
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | ||||
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927
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement |
