PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
IPB65R190C7	1+ $2.930 10+ $2.490 100+ $1.990 500+ $1.750 1000+ $1.450		PDF RFQ	1,030 In-stock	Infineon Technologies	MOSFET N-Ch 700V 49A D2PAK-2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPD65R190C7	1+ $2.880 10+ $2.450 100+ $1.960 500+ $1.710 2500+ $1.320		PDF RFQ	5,060 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPB65R190C7ATMA1	1+ $2.930 10+ $2.490 100+ $1.990 500+ $1.750 1000+ $1.450		PDF RFQ	734 In-stock	Infineon Technologies	MOSFET N-Ch 700V 49A D2PAK-2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPP65R190C7	1+ $2.000 10+ $2.000 100+ $1.000 500+ $1.000		PDF RFQ	1,400 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPA65R190C7	1+ $2.930 10+ $2.490 100+ $1.990 500+ $1.750		PDF RFQ	446 In-stock	Infineon Technologies	MOSFET HIGH POWER BEST IN CLASS	20 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	8 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPW65R190C7	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	79 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPW65R190C7XKSA1	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	240 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPD65R190C7ATMA1	1+ $2.880 10+ $2.450 100+ $1.960 500+ $1.710 2500+ $1.320		PDF RFQ	2,500 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPP65R190C7FKSA1	1+ $2.000 10+ $2.000 100+ $1.000 500+ $1.000		PDF RFQ	1,400 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
IPA65R190C7XKSA1	1+ $2.930 10+ $2.490 100+ $1.990 500+ $1.750	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET HIGH POWER BEST IN CLASS	20 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	8 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS