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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,480
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 102 A | 2.7 mOhms | 2.5 V | 23 nC | Enhancement | |||||
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477
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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490
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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21,400
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.1 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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195
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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7,337
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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629
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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2,805
In-stock
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Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 594 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 594 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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2,714
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
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155
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 360 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS |