- Applied Filters :
1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
390
In-stock
|
Toshiba | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 60 A | 10.4 mOhms | 23 nC |
