MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPW65R190C7	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	79 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS
	IPW65R190C7XKSA1	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	240 In-stock	Infineon Technologies	MOSFET HIGH POWER_NEW	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	13 A	168 mOhms	3 V	23 nC	Enhancement	CoolMOS

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