- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V PowerPAK SC-70 | +/- 20 V | SMD/SMT | PowerPAK-SC70-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.021 Ohms | - 3 V | 32 nC | Enhancement |
