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Manufacture :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFP7N80P
1+
$3.390
10+
$2.880
100+
$2.500
250+
$2.370
RFQ
118
In-stock
IXYS MOSFET 7 Amps 800V 1.44 Rds 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 7 A 1.44 Ohms 5 V 32 nC Enhancement Polar, HiPerFET
TK7J90E,S1E
1+
$2.700
10+
$2.170
100+
$1.740
250+
$1.650
RFQ
133
In-stock
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 7 A 1.6 Ohms 4 V 32 nC Enhancement  
TK7A90E,S4X
1+
$1.690
10+
$1.360
100+
$1.090
500+
$0.956
VIEW
RFQ
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 7 A 1.6 Ohms 4 V 32 nC Enhancement  
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