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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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813
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.3A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 400 mOhms | 3 V | 32 nC | CoolMOS | ||||
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28
In-stock
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IXYS | MOSFET 20 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 180 mOhms | 3 V | 32 nC | Enhancement | CoolMOS | |||
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378
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | ||||||
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543
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 45W | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch Clamped 9.5 ohm 70 A DPAK SAFeFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 33 V | 70 A | 9.5 mOhms | 3 V | 32 nC | |||||||
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1,403
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 380 mOhms | 3 V | 32 nC |
