- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.021 Ohms (1)
- 1.9 mOhms (2)
- 110 mOhms (2)
- 15.5 mOhms (1)
- 199 mOhms (1)
- 2.4 mOhms (2)
- 22 mOhms (1)
- 27 mOhms (3)
- 3.3 mOhms (2)
- 3.4 mOhms (3)
- 300 mOhms (1)
- 340 mOhms (3)
- 35 mOhms (2)
- 380 mOhms (1)
- 4.5 mOhms (4)
- 4.9 mOhms (2)
- 40 mOhms (4)
- 420 mOhms (1)
- 5.3 mOhms (2)
- 65 mOhms (1)
- 7.2 mOhms (1)
- 7.6 mOhms (1)
- 740 mOhms (1)
- 9.5 mOhms (1)
- 9.6 mOhms (1)
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44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,420
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | ||||
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4,989
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
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3,594
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 23 A | 2.4 mOhms | 1.7 V | 32 nC | PowerTrench SyncFET | ||||||
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5,435
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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2,012
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
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3,068
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP | SMD/SMT | ThinPAK-5 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16.4 A | 199 mOhms | 3.5 V | 32 nC | CoolMOS | |||||
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3,740
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | ||||
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3,685
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 95A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 95 A | 7.6 mOhms | 2.2 V | 32 nC | Enhancement | ||||
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2,518
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement | ||||||
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4,956
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 65 mOhms | 32 nC | ||||||||
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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3,606
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | ||||
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1,810
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
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1,858
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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1,168
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | ||||||||
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875
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
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595
In-stock
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IXYS | MOSFET 600V 10A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5.5 V | 32 nC | Enhancement | ||||
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1,847
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | OptiMOS | |||
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688
In-stock
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Fairchild Semiconductor | MOSFET 120V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 65 A | 9.6 mOhms | 4 V | 32 nC | PowerTrench | ||||
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566
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | |||||
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970
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 40 FET 40V, 5A, 65mOhm | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | |||||
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1,023
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 22mOhm 32nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | ||||||||
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663
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | ||||||||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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1,385
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | ||||
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55
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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250
In-stock
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Texas instruments | MOSFET 40V CSD18503Q5A 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.4 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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14,860
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement |
