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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,516
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 7.2 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.2 A | 850 mOhms | 32 nC | Enhancement | ||||||
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721
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | ||||||
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1,363
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 41A 22mOhm 32nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 41 A | 35 mOhms | 32 nC | |||||||||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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112,000
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | ||||||
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963
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 28A 22mOhm 32nC Log Lvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 28 A | 35 mOhms | 32 nC | |||||||||
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475
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||||
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360
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | ||||
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118
In-stock
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IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.44 Ohms | 5 V | 32 nC | Enhancement | Polar, HiPerFET | ||||
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33
In-stock
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IXYS | MOSFET 10.0 Amps 600 V 0.74 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5 V | 32 nC | Enhancement | PolarHV | ||||
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564
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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378
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | |||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS |