- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,989
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||||
|
5,435
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | ||||
|
2,518
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement | |||||||
|
3,007
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||||
|
1,810
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||||
|
1,168
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | |||||||||
|
566
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | ||||||
|
1,023
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 47A 22mOhm 32nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | |||||||||
|
663
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | |||||||||
|
1,083
In-stock
|
IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||||
|
55
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | ||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.5 mOhms | 2.1 V | 32 nC | Enhancement | |||||
|
2,124
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.5 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement | |||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch Clamped 9.5 ohm 70 A DPAK SAFeFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 33 V | 70 A | 9.5 mOhms | 3 V | 32 nC | ||||||||
|
1,403
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 380 mOhms | 3 V | 32 nC | ||||||
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement |