- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,420
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | ||||
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4,989
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
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1,810
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
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1,858
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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1,847
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | OptiMOS | |||
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566
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | |||||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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902
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | ||||
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564
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.5 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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3,750
In-stock
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onsemi | MOSFET T6-D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | ||||
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2,124
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.5 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | |||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 15.5 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS |
