- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 0.028 Ohms (1)
- 1.26 Ohms (2)
- 1.4 Ohms (2)
- 105 mOhms (1)
- 11.9 mOhms (2)
- 110 mOhms (3)
- 12.5 mOhms (2)
- 13.7 mOhms (1)
- 13.8 mOhms (2)
- 150 mOhms (1)
- 19.9 mOhms (1)
- 2.5 Ohms (1)
- 20 mOhms (1)
- 200 mOhms (1)
- 24 mOhms (1)
- 280 mOhms (1)
- 30 mOhms (1)
- 4.6 mOhms (1)
- 6 Ohms (2)
- 60 mOhms (2)
- 65 mOhms (6)
- 77 mOhms (1)
- 780 mOhms (3)
- 790 mOhms (1)
- 8 Ohms (1)
- 9.1 mOhms (1)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
44 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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435
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
|
346
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
|
33,632
In-stock
|
onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 12.5 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V | 11 A | 9.1 mOhms | 1.3 V | 10 nC | ||||||
|
21,000
In-stock
|
Vishay Semiconductors | MOSFET 30V 7.8A 4W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.8 A | 0.028 Ohms | 1.5 V | 10 nC | Enhancement | TrenchFET | ||||
|
924
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 6 Ohms | 3 V | 10 nC | Enhancement | |||||
|
27,320
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | ||||||
|
3,682
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS | ||||
|
4,883
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement | |||||
|
1,448
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
|
3,261
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | ||||||
|
1,643
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 65 mOhms | 10 nC | Enhancement | |||||||
|
1,216
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | |||||
|
3,988
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.2 A | 19.9 mOhms | 1.8 V | 10 nC | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 900 mOhms | 3 V | 10 nC | MDmesh | |||||
|
1,955
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | Enhancement | ||||||
|
1,832
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | |||||
|
1,787
In-stock
|
Fairchild Semiconductor | MOSFET Single PT4 Nch 20/8V zener in MLP2x2 | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.5 A | 60 mOhms | 400 mV | 10 nC | Enhancement | |||||
|
746
In-stock
|
Fairchild Semiconductor | MOSFET CFET 3A / 500V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.5 Ohms | 2 V | 10 nC | Enhancement | |||||
|
828
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.6 A | 77 mOhms | 1.5 V | 10 nC | Enhancement | |||||
|
1,221
In-stock
|
IR / Infineon | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 3 V | 10 nC | Enhancement | |||||
|
1,774
In-stock
|
Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.7 A | 24 mOhms | 450 mV | 10 nC | Enhancement | |||||
|
1,707
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | ||||||
|
880
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
|
353
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 55A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
|
280
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 60mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 18 A | 105 mOhms | 10 nC | Enhancement | ||||||
|
2,960
In-stock
|
Nexperia | MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 30 mOhms | 1 V | 10 nC | Enhancement | |||||
|
799
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 790 mOhms | 2 V | 10 nC | Enhancement | MDmesh | ||||
|
4,774
In-stock
|
onsemi | MOSFET NCH 4A 60V 4V DRIVE MCPH6 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4 A | 60 mOhms | 1.2 V | 10 nC | Enhancement | |||||
|
2,611
In-stock
|
Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR | |||||
|
2,057
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4.6 mOhms | 1.3 V | 10 nC | NexFET |