- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,275
In-stock
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Vishay Semiconductors | MOSFET 80V 32A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 32 A | 0.021 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | |||
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5,303
In-stock
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IR / Infineon | MOSFET 20V SINGLE N-CH 1.2mOhms 155nC | 12 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 990 Ohms | 155 nC | ||||||||
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1,870
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TP-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.0076 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | |||
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654
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | ||||
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525
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
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9
In-stock
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IXYS | MOSFET 17 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 15 A | 900 mOhms | 6 V | 155 nC | Enhancement | Linear | |||
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30
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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19
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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1,600
In-stock
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Siliconix / Vishay | MOSFET P-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.013 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 0.0075 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
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VIEW | IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 155 nC |
