- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,411
In-stock
|
Fairchild Semiconductor | MOSFET 60V/20V NCh DualCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 29 A | 2.3 mOhms | 76 nC | ||||||
|
|
GET PRICE |
23,230
In-stock
|
Fairchild Semiconductor | MOSFET 120V NChnl Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 129 A | 4.14 mOhms | 3.1 V | 76 nC | PowerTrench | |||
|
|
4,665
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement | ||||||
|
|
2,262
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
|
|
GET PRICE |
4,483
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 209 A | 2 mOhms | 1 V | 76 nC | Enhancement | StrongIRFET | ||
|
|
2,194
In-stock
|
STMicroelectronics | MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 7.9 mOhms | 76 nC | ||||||||
|
|
1,492
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | |||||
|
|
801
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
|
|
275
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 2.5MOHM TO-220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.67 mOhms | 4 V | 76 nC | Enhancement | PowerTrench | |||
|
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 7.6 mOhms | 3 V | 76 nC | OptiMOS | ||||
|
|
166
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | ||||||||
|
|
2,000
In-stock
|
Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement | ||||
|
|
431
In-stock
|
Texas instruments | MOSFET 80V, N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 3.8 mOhms | 2.2 V | 76 nC | Enhancement | NexFET | |||
|
|
298
In-stock
|
Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.9 mOhms | 2.6 V | 76 nC | NexFET | ||||
|
|
150
In-stock
|
Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.6 mOhms | 2.6 V | 76 nC | Enhancement | NexFET | |||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | ||||||||
|
|
3,200
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | ||||||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement | ||||||
|
|
958
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 340 mOhms | 76 nC | Enhancement | |||||
|
|
3
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 3.5MOHM TO-220F | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 88 A | 3.5 mOhms | 4 V | 76 nC |
