- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
13,330
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
GET PRICE |
12,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
320
In-stock
|
STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | 117 nC | Enhancement | |||||
|
6
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
9,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement | |||||
|
120
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
485
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0036Ohm typ. 110A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 4.2 mOhms | 4.5 V | 117 nC |