- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,351
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | ||||||
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2,368
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | |||||||||
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739
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 39 nC | CoolMOS | ||||||
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1,079
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | |||||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | ||||||
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210
In-stock
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IXYS | MOSFET -100V -18A | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 2.5 V to - 4.5 V | 39 nC | Enhancement | |||||
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385
In-stock
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onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | ||||||
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424
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | ||||||
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390
In-stock
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IXYS | MOSFET 18 Amps 100V 0.12 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 4.5 V | 39 nC | Enhancement | TrenchP | |||||
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357
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | 3 V | 39 nC | Enhancement | |||||
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36
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.500 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 4.5 V | 39 nC | Enhancement | |||||
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310
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.50 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 5 V | 39 nC | Enhancement | HyperFET | ||||
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100
In-stock
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IXYS | MOSFET 3 Amps 1000V 4.8 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3 A | 4.8 Ohms | 4.8 V | 39 nC | Enhancement | Polar | ||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement | |||||
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525
In-stock
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Fairchild Semiconductor | MOSFET N-CH UNIFET2 SINGLE GAGE 500V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 540 mOhms | 5 V | 39 nC |