MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQD50N06-09L_GE3	1+ $4.600 10+ $3.700 100+ $3.370 250+ $3.040 2000+ $2.190		PDF RFQ	20,000 In-stock	Vishay Semiconductors	MOSFET 60V 50A 136W AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	50 A	0.0071 Ohms	1.5 V	72 nC	Enhancement	TrenchFET
	TPH2R306NH,L1Q	1+ $2.820 10+ $2.270 100+ $1.820 250+ $1.720 5000+ $1.140		PDF RFQ	1,438 In-stock	Toshiba	MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET	20 V	SMD/SMT	SOP-Advance-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	130 A	1.9 mOhms	2 V to 4 V	72 nC		UMOSVIII
	SQP50N06-09L_GE3	1+ $2.160 10+ $1.740 100+ $1.390 500+ $1.210	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	60 V	50 A	0.0071 Ohms	1.5 V	72 nC	Enhancement	TrenchFET

SQD50N06-09L_GE3

SQD50N06-09L_GE3

Vishay Semiconductors

MOSFET 60V 50A 136W AEC-Q101 Qualified

Stock : 20,000

1+: $4.600

10+: $3.700

100+: $3.370

250+: $3.040

2000+: $2.190

TPH2R306NH,L1Q

TPH2R306NH,L1Q

Toshiba

MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET

Stock : 1,438

1+: $2.820

10+: $2.270

100+: $1.820

250+: $1.720

5000+: $1.140

SQP50N06-09L_GE3

SQP50N06-09L_GE3

Siliconix / Vishay

MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

Stock : 0

1+: $2.160

10+: $1.740

100+: $1.390

500+: $1.210

GET PRICE

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