- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
86,200
In-stock
|
Toshiba | MOSFET Pb-F POWER MOSFET TRANSISTOR DOSP-ADV... | 20 V | + 150 C | Tape & Reel (TR) | 142 W | N-Channel | 75 V | 170 A | 2.5 mOhms | 2 V | 72 nC | 15 ns | QFN-8 | 56 ns | 30 ns | 100% Green available | |||||||||||
|
8,323
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | |||||||||||
|
4,783
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | ||||||||||
|
1,354
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | ||||||||||||
|
4,300
In-stock
|
Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 108 A | 3 mOhms | 72 nC | Enhancement | ||||||||||||
|
471
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | |||||||||||
|
1,685
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | |||||||||||
|
431
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | |||||||||||
|
2,568
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel Single | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 150 A | 2.1 mOhms | 2 V | 72 nC | Enhancement | |||||||||||
|
1,438
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 1.9 mOhms | 2 V to 4 V | 72 nC | UMOSVIII | |||||||||||
|
2,950
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 24 A | 4 mOhms | 72 nC | Enhancement | PowerTrench | |||||||||||
|
VIEW | STMicroelectronics | MOSFET N-CH 100V 49mOhm 110A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2.5 V | 72 nC | Enhancement |