- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.00115 Ohms (2)
- 0.005 Ohms (1)
- 0.0063 Ohms (1)
- 1.5 mOhms (1)
- 1.6 mOhms (1)
- 1.95 mOhms (1)
- 110 mOhms (3)
- 150 mOhms (2)
- 156 mOhms (1)
- 2.5 mOhms (2)
- 2.8 mOhms (1)
- 3.1 mOhms (2)
- 3.2 mOhms (1)
- 4.3 mOhms (1)
- 5 mOhms (1)
- 6.3 mOhms (2)
- 6.6 mOhms (1)
- 65 mOhms (1)
- 7 mOhms (2)
- 7.2 mOhms (2)
- 7.65 mOhms (1)
- 87 mOhms (4)
- 9.1 mOhms (2)
- 9.4 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,000
In-stock
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Vishay Semiconductors | MOSFET 40V Vds 60A Id AEC-Q101 Qualified | 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 5 mOhms | 1.5 V | 55 nC | Enhancement | ||||
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2,054
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | ||||
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1,688
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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6,105
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | |||
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2,543
In-stock
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Fairchild Semiconductor | MOSFET 60V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.6 mOhms | 2 V | 55 nC | Enhancement | PowerTrench | |||
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55,020
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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935
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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4,764
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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6,985
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | |||
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1,025
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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1,355
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 13 A | 7.65 mOhms | 4 V | 55 nC | PowerTrench | |||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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GET PRICE |
18,600
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
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2,142
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | ||||
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1,101
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | ||||
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359
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 37 A | 9.1 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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570
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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940
In-stock
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Infineon Technologies | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 247 A | 1.95 mOhms | 2.35 V | 55 nC | |||||
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466
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55 nC Qg, Super | Through Hole | TO-273-3 | Tube | Si | N-Channel | 55 V | 174 A | 4.3 mOhms | 55 nC | ||||||||||
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961
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power ... | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 70 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | |||||
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508
In-stock
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IR / Infineon | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 1.6 mOhms | 2.35 V | 55 nC | |||||
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594
In-stock
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Vishay Semiconductors | MOSFET 40V 58A 48W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 0.005 Ohms | 1.5 V | 55 nC | Enhancement | TrenchFET | |||
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114
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
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713
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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14
In-stock
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IXYS | MOSFET PolarP Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | ||||
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102
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 150 mOhms | 3 V | 55 nC | Enhancement | ||||
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 0.0063 Ohms | 2.5 V | 55 nC | Enhancement | ||||
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement |
