- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,462
In-stock
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onsemi | MOSFET T1 60V PCH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 183 mOhms | - 2.5 V | 4.3 nC | Enhancement | ||||
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
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1,219
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.2 A | 108 mOhms | 4.3 nC | PowerTrench | |||||||
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50
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | |||||
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3,496
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 1.7 A | 7.02 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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198
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | ||||||
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740
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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2,063
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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326
In-stock
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Texas instruments | MOSFET 100V, 49mOhm NexFET Power MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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2,788
In-stock
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Texas instruments | MOSFET P-Channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 33 mOhms | 4.3 nC | NexFET | |||||
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1,204
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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1,191
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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6
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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10
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement |
