- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,555
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | ||||||
|
|
8,340
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 82 nC | Enhancement | |||||
|
|
1,548
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
|
|
90,700
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
|
|
766
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 4 V | 82 nC | Enhancement | ||||
|
|
761
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
495
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 4.6 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
410
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 108 mOhms | 82 nC | Enhancement | ||||||
|
|
365
In-stock
|
onsemi | MOSFET 60V T2 TO220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 98 A | 5.7 mOhms | 4 V | 82 nC | |||||
|
|
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.7 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
81
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
|
|
206
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.7 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
250
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement | NexFET | |||
|
|
2,659
In-stock
|
onsemi | MOSFET NFET DPAK 60V 102A 6MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 98 A | 5.7 mOhms | 82 nC | ||||||
|
|
VIEW | Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 79 A | 14 mOhms | 4 V | 82 nC | PowerTrench | ||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 4.6 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1.2 V | 82 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1 V to 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
2,394
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement | ||||
|
|
32
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement |
