- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,807
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | ||||
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3,252
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | ||||
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30,000
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 16 A | 24 mOhms | 2.9 V | 6.7 nC | PowerTrench | ||||
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930
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | ||||
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1,648
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement |
