- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,981
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | ||||||||
|
|
2,920
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | ||||||
|
|
5,764
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL PCh -30V 2.3A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 165 mOhms | 6.9 nC | ||||||||
|
|
4,809
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | ||||
|
|
2,447
In-stock
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V | - 4 A | 38 mOhms | 6.9 nC | ||||||
|
|
2,868
In-stock
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.4 A | 38 mOhms | 6.9 nC | ||||||
|
|
609,400
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -20V -4.3A 54mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 4.3 A | 54 mOhms | 6.9 nC | |||||||||
|
|
660
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | |||||
|
|
126
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 37mOhms 6.9nC | 20 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 65 mOhms | 6.9 nC | ||||||||
|
|
75
In-stock
|
IXYS | MOSFET Polar3 HiPerFET Power MOSFETs | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | 5 V | 6.9 nC | Enhancement | Polar3, HiperFET | ||||
|
|
VIEW | Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 6.9 nC | ||||||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | ||||||||
|
|
2,560
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 30V 8.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 8.9 A | 21.3 mOhms | 6.9 nC | ||||||||
|
|
829
In-stock
|
IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | 6.9 nC | Enhancement | |||||
|
|
550
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | ||||||||
|
|
265
In-stock
|
IR / Infineon | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | Enhancement |
