- Manufacture :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,421
In-stock
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IR / Infineon | MOSFET 80V DUAL N-CH HEXFET 73mOhm VGS 10V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 15 nC | Enhancement | |||||
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4,774
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 9A 17mOhm 15nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 9 A | 21 mOhms | 15 nC | ||||||||
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5,945
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 3.5A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 3 V | 15 nC | |||||
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1,903
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 80V 3.6A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 4 V | 15 nC | |||||
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2,220
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 17mOhms 15nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 15.5 mOhms | 3 V | 15 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms | 12 V | SMD/SMT | SO-8 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 60 mOhms | 15 nC | Enhancement |