- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
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- Rds On - Drain-Source Resistance :
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23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
7,660
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | ||||
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1,940
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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868
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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728
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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192
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 120 mOhms | 5 V | 85 nC | Enhancement | Polar3, HiperFET | |||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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138
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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359
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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776
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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132
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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55
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | ||||
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58
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | ||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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499
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | ||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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112
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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74
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 85 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 500V 0.23 Ohm 17A Zener SuperMESH | 30 V | Through Hole | TO-281-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | |||||||
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292
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 6.7 mOhms | 3.7 V | 85 nC | StrongIRFET | ||||
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290
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 5.6 mOhms | 2.1 V | 85 nC | Enhancement | StrongIRFET |
