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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,742
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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2,467
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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138
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | |||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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499
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | |||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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112
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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74
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 0.0037 Ohms | 1.5 V | 85 nC | Enhancement |