- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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868
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
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192
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 120 mOhms | 5 V | 85 nC | Enhancement | Polar3, HiperFET | |||
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138
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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58
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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74
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | |||
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52
In-stock
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Toshiba | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.5 V | 85 nC | Enhancement |
