- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,700
In-stock
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onsemi | MOSFET 60V T1 PCH DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 61 A | 16 mOhms | 85 nC | |||||||
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1,457
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | ||||||
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3,742
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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2,467
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | |||||
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337
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | |||||
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511
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 85 A | 6.7 mOhms | 3.7 V | 85 nC | StrongIRFET | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 0.0037 Ohms | 1.5 V | 85 nC | Enhancement | |||||
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609
In-stock
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IR / Infineon | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 4 V | 85 nC | ||||||
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VIEW | Infineon Technologies | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 85 nC | |||||||||
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292
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 6.7 mOhms | 3.7 V | 85 nC | StrongIRFET | |||||
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290
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 5.6 mOhms | 2.1 V | 85 nC | Enhancement | StrongIRFET |