- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN1010D-3 (1)
- DirectFET-SQ (1)
- EMH-8 (1)
- MicroFET-6 (1)
- Power-33-8 (1)
- PowerPAK-1212-8 (1)
- PQFN-6 (1)
- SO-8 (3)
- SOIC-8 (1)
- SOT-223-4 (4)
- SOT-23-3 (5)
- SSOT-3 (1)
- TDSON-8 (4)
- ThinPAK-56-8 (1)
- TO-220-3 (9)
- TO-220FP-3 (8)
- TO-220FP-5 (1)
- TO-251-3 (3)
- TO-252-3 (15)
- TO-263-3 (3)
- TO-281-3 (2)
- TSDSON-8 (4)
- TSON-Advance-8 (1)
- TSOP-6 (2)
- WDFN-8 (1)
- WLCSP-4 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 15 A (1)
- - 2.6 A (1)
- - 2.8 A (1)
- - 3.2 A (1)
- - 3.5 A (1)
- - 4 A (2)
- - 4.1 A (1)
- - 5 A (1)
- - 6 A (1)
- 1.5 A (1)
- 1.9 A (2)
- 11 A (1)
- 17 A (2)
- 2 A (2)
- 2.5 A (1)
- 2.6 A (3)
- 2.9 A (2)
- 21 A (4)
- 3 A (2)
- 30 A (1)
- 33 A (1)
- 4 A (2)
- 4.3 A (1)
- 4.4 A (1)
- 40 A (3)
- 5 A (6)
- 5.7 A (1)
- 57 A (1)
- 6.2 A (4)
- 6.7 A (1)
- 7 A (6)
- 7.3 A (2)
- 7.5 A (1)
- 7.6 A (1)
- 8 A (11)
- 8.3 A (1)
- 80 A (1)
- 82 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.032 Ohms (1)
- 0.05 Ohms (1)
- 0.057 Ohms (1)
- 0.084 Ohms (1)
- 0.13 Ohms (1)
- 1 Ohms (1)
- 1.15 Ohms (4)
- 1.5 Ohms (1)
- 10.3 mOhms (1)
- 133 mOhms (1)
- 150 mOhms (1)
- 18 mOhms (1)
- 185 mOhms (2)
- 2.2 mOhms (1)
- 2.4 Ohms (1)
- 2.8 Ohms (1)
- 200 mOhms (2)
- 21.5 mOhms (1)
- 23 mOhms (1)
- 25 mOhms (1)
- 3.3 Ohms (1)
- 30 mOhms (1)
- 300 mOhms (1)
- 31 mOhms (1)
- 35 mOhms (1)
- 36 mOhms (2)
- 4 mOhms (1)
- 4.5 Ohms (2)
- 4.9 Ohms (1)
- 42 mOhms (2)
- 430 mOhms (1)
- 44 mOhms (1)
- 450 mOhms (2)
- 5 mOhms (2)
- 5.2 mOhms (1)
- 5.6 Ohms (1)
- 5.7 mOhms (1)
- 500 mOhms (8)
- 540 mOhms (2)
- 550 mOhms (1)
- 58 mOhms (1)
- 59 mOhms (1)
- 6.7 mOhms (1)
- 644 mOhms (2)
- 650 mOhms (1)
- 680 mOhms (3)
- 730 mOhms (1)
- 8.1 mOhms (1)
- 80 mOhms (1)
- 820 mOhms (1)
- 90 mOhms (2)
- 900 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
76 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
4,692
In-stock
|
Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tray | 1 Channel | 83 W | 100 V | 40 A | 10.3 mOhms | 1.7 V | 12 nC | 5000 | Green available | ||||||||||
|
|
25,053
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.4 A | 36 mOhms | 400 mV | 12 nC | Enhancement | |||||||
|
|
9,470
In-stock
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 7 A | 23 mOhms | 0.9 V | 12 nC | Enhancement | PowerTrench | ||||||
|
|
8,521
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.3 A | 0.057 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | ||||||
|
|
90,460
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel MOSFET, UniFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.6 A | 300 mOhms | 12 nC | |||||||||||
|
|
9,192
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 57A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 57 A | 5.2 mOhms | 12 nC | OptiMOS | ||||||||
|
|
4,031
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | ||||||||
|
|
10,604
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | ||||||
|
|
3,038
In-stock
|
Fairchild Semiconductor | MOSFET UNIFET2 500V | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.5 Ohms | 12 nC | Enhancement | ||||||||
|
|
7,959
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 36 mOhms | 3 V | 12 nC | Enhancement | OptiMOS | ||||||
|
|
3,028
In-stock
|
Fairchild Semiconductor | MOSFET Thin gate 25/12V NCh PowerTrench MOSFET | SMD/SMT | Power-33-8 | Reel | Si | N-Channel | 25 V | 17 A | 5.7 mOhms | 12 nC | PowerTrench | ||||||||||||
|
|
4,193
In-stock
|
Vishay Semiconductors | MOSFET 60V 8A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.05 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | ||||||
|
|
3,934
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | |||||||
|
|
2,447
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | |||||||
|
|
2,167
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | |||||||
|
|
8,680
In-stock
|
onsemi | MOSFET PCH+PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | EMH-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 133 mOhms | 12 nC | |||||||||
|
|
4,702
In-stock
|
Infineon Technologies | MOSFET 50V DUAL N-CH HEXFET 130mOhms 12nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 12 nC | Enhancement | ||||||||
|
|
2,183
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET, UniFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 6.2 A | 430 mOhms | 12 nC | |||||||||||
|
|
780
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-channel LL PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.2 mOhms | 3.2 V | 12 nC | Enhancement | |||||||
|
|
899
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | 20 V | Through Hole | TO-220FP-5 | - 55 C | Tube | 2 Channel | Si | N-Channel | 100 V | 11 A | 58 mOhms | 12 nC | Enhancement | |||||||||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.7 A | 650 mOhms | 4 V | 12 nC | CoolMOS | |||||||
|
|
4,039
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | SIPMOS | ||||||
|
|
3,183
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||||
|
|
2,464
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | |||||||
|
|
1,442
In-stock
|
Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS HEXFET | 20 V | SMD/SMT | DirectFET-SQ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 17 A | 6.7 mOhms | 1.9 V | 12 nC | Directfet | |||||||
|
|
755
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | ||||||||
|
|
902
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | |||||||
|
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | ||||||
|
|
2,237
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | |||||||
|
|
2,479
In-stock
|
onsemi | MOSFET NFET DPAK 600V 5.9A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 820 mOhms | 2 V | 12 nC | Enhancement |
