- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,031
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | |||||
|
|
1,739
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | ||||
|
|
906
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement |
