- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,640
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.3 mOhms | 135 nC | OptiMOS | |||||
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959
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | |||||
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6,680
In-stock
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC | 10 V | Through Hole | TO-3PN-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 65 mOhms | 135 nC | ||||||||
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5
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 3.5 V | 135 nC | Enhancement | ||||
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2,399
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5mOhm 90nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET |
