- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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33,600
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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536
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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219
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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6,680
In-stock
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC | 10 V | Through Hole | TO-3PN-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 65 mOhms | 135 nC | ||||||||
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GET PRICE |
20,000
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 62 mOhms | 3 V | 135 nC | Enhancement | |||
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5
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 3.5 V | 135 nC | Enhancement | ||||
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400
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 74 A | 4.7 mOhms | 1.2 V | 135 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 135 nC | Enhancement |
