- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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3,650
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | |||
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1,426
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 100mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | Enhancement |
