- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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- 1.7 mOhms (1)
- 10.1 mOhms (1)
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- 14.4 mOhms (1)
- 14.6 mOhms (1)
- 16.5 mOhms (1)
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- 3.5 mOhms (1)
- 3.6 mOhms (1)
- 390 mOhms (1)
- 460 mOhms (1)
- 5.5 mOhms (1)
- 7.4 mOhms (1)
- 7.7 mOhms (1)
- 78 mOhms (2)
- 8.2 mOhms (2)
- 8.3 mOhms (2)
- 9.4 mOhms (1)
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33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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22,661
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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20,568
In-stock
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onsemi | MOSFET Single N-CH 60V 11A, 37A | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 10.1 mOhms | 1.5 V to 2.3 V | 28 nC | |||||
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3,917
In-stock
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Fairchild Semiconductor | MOSFET 20V 2xCommon Drn Nch PowerTrench MOSFET | SMD/SMT | MicroFET-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 18 A | 16.5 mOhms | 1.5 V | 28 nC | PowerTrench | ||||||
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6,262
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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5,380
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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4,223
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 28 nC | |||||||
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2,952
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
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4,312
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 18 mOhms | 28 nC | ||||||||
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4,059
In-stock
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IR / Infineon | MOSFET MOSFT 150V 3.6A 90mOhm 28nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 3.6 A | 90 mOhms | 28 nC | ||||||||
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21,280
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 42 A | 7.4 mOhms | 28 nC | PowerTrench | |||||
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2,222
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | |||||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | |||||
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2,250
In-stock
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onsemi | MOSFET NFET IPAK 500V 5A 1.2OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 28 nC | |||||||
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668
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 7.7 mOhms | 1 V | 28 nC | Enhancement | PowerTrench | |||
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506
In-stock
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Fairchild Semiconductor | MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.4 mOhms | 4 V | 28 nC | |||||
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2,482
In-stock
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onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement | ||||
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142
In-stock
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IR / Infineon | MOSFET MOSFT 150V 18A 125mOhm 28nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | ||||||||
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620
In-stock
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onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.3 A | 5.5 mOhms | 1.2 V | 28 nC | ||||||
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1,772
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | ||||
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183
In-stock
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Toshiba | MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47 | SMD/SMT | TO-220FP-3 | 1 Channel | Si | N-Channel | 500 V | 12.5 A | 390 mOhms | 4 V | 28 nC | |||||||||
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27,063
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 3 V | 28 nC | Enhancement | STripFET | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 28 nC | Directfet | |||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 15A 7mOhm 28nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 3.5 mOhms | 28 nC | Directfet | |||||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 28nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 2.8 mOhms | 28 nC | ||||||||
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VIEW | IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 8 A | 0.021 Ohms | - 1 V | 28 nC | Enhancement |
