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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,223
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 28 nC | ||||||
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4,312
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 18 mOhms | 28 nC | |||||||
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4,059
In-stock
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IR / Infineon | MOSFET MOSFT 150V 3.6A 90mOhm 28nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 3.6 A | 90 mOhms | 28 nC | |||||||
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2,222
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | ||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 15A 7mOhm 28nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | |||||||
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1,503
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 5 V | 28 nC | |||||
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2,159
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 7mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | Enhancement |
