- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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22,661
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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20,568
In-stock
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onsemi | MOSFET Single N-CH 60V 11A, 37A | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 10.1 mOhms | 1.5 V to 2.3 V | 28 nC | |||||
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3,917
In-stock
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Fairchild Semiconductor | MOSFET 20V 2xCommon Drn Nch PowerTrench MOSFET | SMD/SMT | MicroFET-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 18 A | 16.5 mOhms | 1.5 V | 28 nC | PowerTrench | ||||||
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6,262
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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5,380
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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4,223
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 28 nC | |||||||
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2,952
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
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21,280
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 42 A | 7.4 mOhms | 28 nC | PowerTrench | |||||
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2,222
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | |||||
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1,935
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | |||||
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2,250
In-stock
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onsemi | MOSFET NFET IPAK 500V 5A 1.2OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 28 nC | |||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 450 mOhms | 28 nC | CoolMOS | |||||
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GET PRICE |
17,260
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9.1A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.1 A | 460 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | ||
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2,482
In-stock
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onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement | ||||
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490
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 410 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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495
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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620
In-stock
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onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.3 A | 5.5 mOhms | 1.2 V | 28 nC | ||||||
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1,772
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | ||||
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546
In-stock
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Texas instruments | MOSFET 60V N-Chnl NxFT Pwr MSFT .. | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 9 mOhms | 1.9 V | 28 nC | NexFET | ||||
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190
In-stock
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Texas instruments | MOSFET 80V 7.6mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.8 mOhms | 2.8 V | 28 nC | Enhancement | NexFET | |||
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288
In-stock
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Toshiba | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 22 A | 11.5 mOhms | 2 V to 4 V | 28 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 410 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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4,078
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.1 A | 460 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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1,503
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 5 V | 28 nC | ||||||
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2,159
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 7mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | Enhancement |
