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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFI4229PBF
1+
$3.010
10+
$2.560
100+
$2.220
250+
$2.110
RFQ
1,152
In-stock
IR / Infineon MOSFET MOSFT 250V 19A 46mOhm 73nC 30 V Through Hole TO-220-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 250 V 19 A 46 mOhms   73 nC Enhancement  
BSB044N08NN3 G
1+
$2.500
10+
$2.200
100+
$1.700
500+
$1.400
1000+
$1.200
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 80 V 90 A 3.7 mOhms 2 V 73 nC Enhancement OptiMOS
IRFI4227PBF
1+
$2.600
10+
$2.210
100+
$1.770
250+
$1.680
RFQ
441
In-stock
Infineon Technologies MOSFET MOSFT 200V 26A 22mOhm 73nC 30 V Through Hole TO-220-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 200 V 26 A 25 mOhms   73 nC Enhancement  
IPL65R190E6AUMA1
3000+
$1.450
6000+
$1.400
9000+
$1.310
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 650V 20.2A VSON-4 20 V SMD/SMT VSON-4 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 20.2 A 190 mOhms 3 V 73 nC Enhancement CoolMOS
BSB044N08NN3GXUMA1
5000+
$1.230
10000+
$1.190
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 80 V 90 A 3.7 mOhms 2 V 73 nC Enhancement OptiMOS
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