- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,767
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 5.4 A | 27 mOhms | 6.3 nC | ||||||
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2,818
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 31 mOhms | 1 V | 6.3 nC | Enhancement | ||||
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2,324
In-stock
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Texas instruments | MOSFET Dual 30V N-CH NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 27 A | 38 mOhms | 1 V | 6.3 nC | NexFET | ||||
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1,118
In-stock
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Texas instruments | MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 1.1 V | 6.3 nC | Enhancement | NexFET | |||
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2,525
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 100 mOhms | 700 mV | 6.3 nC | Enhancement |
