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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,203
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 24 mOhms | 1.6 V | 15.3 nC | PowerTrench | |||||
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3,222
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
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426
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
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540
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
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1,490
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 4.5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS |