- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,645
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual P-Channel PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 95 mOhms | - 0.6 V | 5.5 nC | PowerTrench | ||||
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4,194
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 371 mOhms | 2 V | 5.5 nC | Enhancement | OptiMOS | |||
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3,171
In-stock
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onsemi | MOSFET NFET DPAK 400V 1.7A 5.5OH | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 1.7 A | 4.5 Ohms | 1.6 V | 5.5 nC | |||||
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773
In-stock
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onsemi | MOSFET NFET SOT223 400V 1.7A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 400 mA | 4.5 Ohms | 800 mV | 5.5 nC | Enhancement | ||||
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4,541
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement | ||||
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1,505
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 260mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 3.9 Ohms | 800 mV | 5.5 nC | Enhancement | ||||
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2,721
In-stock
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Nexperia | MOSFET PMV100ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 54 mOhms | 1 V | 5.5 nC | Enhancement | ||||
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161,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement | ||||
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448
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 260mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 3.9 Ohms | 800 mV | 5.5 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement | PowerDI | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 371 mOhms | 2 V | 5.5 nC | Enhancement | OptiMOS |
