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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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479
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | |||
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GET PRICE |
37,000
In-stock
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Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | ||
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350
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 16.3 mOhms | 2.4 V | 16.4 nC | NexFET | ||||
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25,000
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS |
